APA

Rathi Servin, University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science & University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science. (2011). Modeling, simulation & characterization of modified different gate geometric double gate high electron mobility transistor for high power and high frequency applications with two separate / common gate control. : .

Chicago

Rathi Servin, University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science and University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science. 2011. Modeling, simulation & characterization of modified different gate geometric double gate high electron mobility transistor for high power and high frequency applications with two separate / common gate control. : .

Harvard

Rathi Servin, University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science and University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science. (2011). Modeling, simulation & characterization of modified different gate geometric double gate high electron mobility transistor for high power and high frequency applications with two separate / common gate control. : .

MLA

Rathi Servin, University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science and University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science. Modeling, simulation & characterization of modified different gate geometric double gate high electron mobility transistor for high power and high frequency applications with two separate / common gate control. : . 2011.