Analytical modeling and simulation of gate dielectric and gate material engineered trapezoidal recessed chanel mosfet in sub 100 nm regime

Malik Priyanka

Analytical modeling and simulation of gate dielectric and gate material engineered trapezoidal recessed chanel mosfet in sub 100 nm regime - 2011 - 476p. p. cm.

2989

Theses


ELECTRICAL ENGINEERING
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