Modeling and Simulation of Novel Ga2O3 Devices for High Power and High Power and High Frequency Applications

By: Contributor(s): Material type: TextLanguage: English Publication details: Delhi University of Delhi. Faculty of Inter-Disciplinary&Applied Science. Deptt. of Electronic Science 2024Description: 228pSubject(s): Other classification:
Item type: Thesis
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Thesis Central Library Central Library Not for loan TH0027655

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