Study of electrical transport properties of bismuth doped bulk amorphous Ge-Se system
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TextLanguage: English Publication details: Delhi University of Delhi India 1989Subject(s):
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Study of electrical transport properties of bismuth doped bulk amorphous Ge-Se system
APA
Arora Manoj Kumar, University of Delhi. Faculty of Science. Department of Physics and Astrophysics, Mathur P C Gu, Mehra R M Gu & University of Delhi. Faculty of Science. Department of Physics and Astrophysics. (1989). Study of electrical transport properties of bismuth doped bulk amorphous Ge-Se system. Delhi: University of Delhi India.
Chicago
Arora Manoj Kumar, University of Delhi. Faculty of Science. Department of Physics and Astrophysics, Mathur P C Gu, Mehra R M Gu and University of Delhi. Faculty of Science. Department of Physics and Astrophysics. 1989. Study of electrical transport properties of bismuth doped bulk amorphous Ge-Se system. Delhi: University of Delhi India.
Harvard
Arora Manoj Kumar, University of Delhi. Faculty of Science. Department of Physics and Astrophysics, Mathur P C Gu, Mehra R M Gu and University of Delhi. Faculty of Science. Department of Physics and Astrophysics. (1989). Study of electrical transport properties of bismuth doped bulk amorphous Ge-Se system. Delhi: University of Delhi India.
MLA
Arora Manoj Kumar, University of Delhi. Faculty of Science. Department of Physics and Astrophysics, Mathur P C Gu, Mehra R M Gu and University of Delhi. Faculty of Science. Department of Physics and Astrophysics. Study of electrical transport properties of bismuth doped bulk amorphous Ge-Se system. Delhi: University of Delhi India. 1989.