Model, characterization and simulation of Algan/Gan metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high power microwave applications
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TextLanguage: English Publication details: 2010Description: 182p. p. cmSubject(s):
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Model, characterization and simulation of Algan/Gan metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high power microwave applications
APA
Aggarwal Ruchika, University of Delhi. Faculty of Inter-displinary and Applied Sciences. Department of Electronic Science, Dr. Mridula Gupta Gu & University of Delhi. Faculty of Inter-displinary and Applied Sciences. Department of Electronic Science. (2010). Model, characterization and simulation of Algan/Gan metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high power microwave applications. : .
Chicago
Aggarwal Ruchika, University of Delhi. Faculty of Inter-displinary and Applied Sciences. Department of Electronic Science, Dr. Mridula Gupta Gu and University of Delhi. Faculty of Inter-displinary and Applied Sciences. Department of Electronic Science. 2010. Model, characterization and simulation of Algan/Gan metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high power microwave applications. : .
Harvard
Aggarwal Ruchika, University of Delhi. Faculty of Inter-displinary and Applied Sciences. Department of Electronic Science, Dr. Mridula Gupta Gu and University of Delhi. Faculty of Inter-displinary and Applied Sciences. Department of Electronic Science. (2010). Model, characterization and simulation of Algan/Gan metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high power microwave applications. : .
MLA
Aggarwal Ruchika, University of Delhi. Faculty of Inter-displinary and Applied Sciences. Department of Electronic Science, Dr. Mridula Gupta Gu and University of Delhi. Faculty of Inter-displinary and Applied Sciences. Department of Electronic Science. Model, characterization and simulation of Algan/Gan metal insulator semiconductor heterostructure field effect transistor (MISHFET) for high power microwave applications. : . 2010.