Modeling, simulation & characterization of modified different gate geometric double gate high electron mobility transistor for high power and high frequency applications with two separate / common gate control
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Modeling, simulation & characterization of modified different gate geometric double gate high electron mobility transistor for high power and high frequency applications with two separate / common gate control
APA
Rathi Servin, University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science & University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science. (2011). Modeling, simulation & characterization of modified different gate geometric double gate high electron mobility transistor for high power and high frequency applications with two separate / common gate control. : .
Chicago
Rathi Servin, University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science and University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science. 2011. Modeling, simulation & characterization of modified different gate geometric double gate high electron mobility transistor for high power and high frequency applications with two separate / common gate control. : .
Harvard
Rathi Servin, University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science and University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science. (2011). Modeling, simulation & characterization of modified different gate geometric double gate high electron mobility transistor for high power and high frequency applications with two separate / common gate control. : .
MLA
Rathi Servin, University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science and University of Delhi. Faculty of Inter Disciplinary & Applied Sciences. Department of Electronic Science. Modeling, simulation & characterization of modified different gate geometric double gate high electron mobility transistor for high power and high frequency applications with two separate / common gate control. : . 2011.