Chaujar Rishu <br/><br/>
Analytical modeling and simulation of gate electrode workfunction and dielectric engineered recessed channel mosfet in sub-100 nm regime 

 -  2008 
 - 196p.  p.  cm. 
<br/><br/><label>Standard No.: </label>91615 
<br/><br/><label>Source: </label> Theses 
<br/><br/><label>Subjects--Topical Terms: </label><br/>ELECTRICAL ENGINEERING