Bhattacharya Monika Au. <br/><br/>
Modeling simulation and characterization of noise in InAIAs/ InGaAs tied - geometery double - gate high electron mobility transistor for millmeter - wave applications 

 -  2013 
 - 341p.  p.  cm. 
<br/><br/><label>Standard No.: </label>10204 
<br/><br/><label>Source: </label> Theses 
<br/><br/><label>Subjects--Topical Terms: </label><br/>ELECTRICAL ENGINEERING