Modeling simulation and characterization of noise in InAIAs/ InGaAs tied - geometery double - gate high electron mobility transistor for millmeter - wave applications - Bhattacharya Monika Au.; University of Delhi. Faculty of Inter-displinary and Applied Sciences. Department of Electronic Science; Gupta Mridula Gu.; University of Delhi. Faculty of Inter-displinary and Applied Sciences. Department of Electronic Science (2013)
Keywords: ELECTRICAL ENGINEERING