<?xml version="1.0" encoding="utf-8" ?> <rss version="2.0" xmlns:opensearch="http://a9.com/-/spec/opensearch/1.1/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:atom="http://www.w3.org/2005/Atom"> <channel> <title> <![CDATA[Delhi University Library System Search for 'au:&quot; Prof R S Gupta Gu.&quot;']]> </title> <!-- prettier-ignore-start --> <link> /cgi-bin/koha/opac-search.pl?idx=&#38;q=au%3A%22%20Prof%20R%20S%20Gupta%20Gu.%22&#38;sort_by=title_asc&#38;format=rss </link> <!-- prettier-ignore-end --> <atom:link rel="self" type="application/rss+xml" href="/cgi-bin/koha/opac-search.pl?idx=&#38;q=au%3A%22%20Prof%20R%20S%20Gupta%20Gu.%22&#38;sort_by=title_asc&#38;format=rss" /> <description> <![CDATA[ Search results for 'au:&quot; Prof R S Gupta Gu.&quot;' at Delhi University Library System]]> </description> <opensearch:totalResults>26</opensearch:totalResults> <opensearch:startIndex>0</opensearch:startIndex> <opensearch:itemsPerPage>50</opensearch:itemsPerPage> <atom:link rel="search" type="application/opensearchdescription+xml" href="/cgi-bin/koha/opac-search.pl?idx=&#38;q=au%3A%22%20Prof%20R%20S%20Gupta%20Gu.%22&#38;sort_by=title_asc&#38;format=opensearchdescription" /> <opensearch:Query role="request" searchTerms="idx%3D%26q%3Dau%253A%2522%2520Prof%2520R%2520S%2520Gupta%2520Gu.%2522" startPage="" /> <item> <title> Analytical modeling and characterization of hot carrier resistant small geometry LDD mosfets for VLSI/ULSI applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=873806</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Kalra Ekta.<br /> 2000 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=873806">Place hold on <em>Analytical modeling and characterization of hot carrier resistant small geometry LDD mosfets for VLSI/ULSI applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=873806</guid> </item> <item> <title> Analytical modeling and characterization of hot carrier resistant small geometry LDD mosfets for VLSI/ULSI applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=865591</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Kalra Ekta.<br /> 2000 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=865591">Place hold on <em>Analytical modeling and characterization of hot carrier resistant small geometry LDD mosfets for VLSI/ULSI applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=865591</guid> </item> <item> <title> Analytical modeling and simulation of gate electrode workfunction and dielectric engineered recessed channel mosfet in sub-100 nm regime </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=878338</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Chaujar Rishu.<br /> 2008 .<br /> 196p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=878338">Place hold on <em>Analytical modeling and simulation of gate electrode workfunction and dielectric engineered recessed channel mosfet in sub-100 nm regime</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=878338</guid> </item> <item> <title> Analytical modeling and simulation of gate electrode workfunction and dielectric engineered recessed channel mosfet in sub-100 nm regime </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=870123</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Chaujar Rishu.<br /> 2008 .<br /> 196p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=870123">Place hold on <em>Analytical modeling and simulation of gate electrode workfunction and dielectric engineered recessed channel mosfet in sub-100 nm regime</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=870123</guid> </item> <item> <title> Analytical modeling, analysis and characterization of GaN MESFET for optoelectronic applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=875804</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Adarsh Singh.<br /> 2003 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=875804">Place hold on <em>Analytical modeling, analysis and characterization of GaN MESFET for optoelectronic applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=875804</guid> </item> <item> <title> Analytical modeling, analysis and characterization of GaN MESFET for optoelectronic applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=867589</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Adarsh Singh.<br /> 2003 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=867589">Place hold on <em>Analytical modeling, analysis and characterization of GaN MESFET for optoelectronic applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=867589</guid> </item> <item> <title> Correlation and enhancement of circuit parameters with device parameters of different metal-insulator geometric single/double/dual gate 4H-SIC mesfet with common and separate gate control </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=878178</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Aggarwal Sandeep Kumar.<br /> 2007 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=878178">Place hold on <em>Correlation and enhancement of circuit parameters with device parameters of different metal-insulator geometric single/double/dual gate 4H-SIC mesfet with common and separate gate control</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=878178</guid> </item> <item> <title> Correlation and enhancement of circuit parameters with device parameters of different metal-insulator geometric single/double/dual gate 4H-SIC mesfet with common and separate gate control </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=869963</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Aggarwal Sandeep Kumar.<br /> 2007 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=869963">Place hold on <em>Correlation and enhancement of circuit parameters with device parameters of different metal-insulator geometric single/double/dual gate 4H-SIC mesfet with common and separate gate control</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=869963</guid> </item> <item> <title> Modeling and simulation of 6H-SiC MOSFETs for high power and high temperature applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=877463</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Kaushik Navneet.<br /> Delhi University of Delhi India 2005 .<br /> 167p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=877463">Place hold on <em>Modeling and simulation of 6H-SiC MOSFETs for high power and high temperature applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=877463</guid> </item> <item> <title> Modeling and simulation of 6H-SiC MOSFETs for high power and high temperature applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=869248</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Kaushik Navneet.<br /> Delhi University of Delhi India 2005 .<br /> 167p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=869248">Place hold on <em>Modeling and simulation of 6H-SiC MOSFETs for high power and high temperature applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=869248</guid> </item> <item> <title> Modeling and simulation of channel and gate oxide engineered cylindrical/surrounding gate mosfets for ulsi applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=878325</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Harshupreet Kaur.<br /> 2007 .<br /> 171p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=878325">Place hold on <em>Modeling and simulation of channel and gate oxide engineered cylindrical/surrounding gate mosfets for ulsi applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=878325</guid> </item> <item> <title> Modeling and simulation of channel and gate oxide engineered cylindrical/surrounding gate mosfets for ulsi applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=870110</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Harshupreet Kaur.<br /> 2007 .<br /> 171p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=870110">Place hold on <em>Modeling and simulation of channel and gate oxide engineered cylindrical/surrounding gate mosfets for ulsi applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=870110</guid> </item> <item> <title> Modeling, characterization and optimization of InAIAs/InGaAs heterojunction, InP based high electron applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=875799</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Gupta Ritesh.<br /> 2002 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=875799">Place hold on <em>Modeling, characterization and optimization of InAIAs/InGaAs heterojunction, InP based high electron applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=875799</guid> </item> <item> <title> Modeling, characterization and optimization of InAIAs/InGaAs heterojunction, InP based high electron applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=867584</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Gupta Ritesh.<br /> 2002 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=867584">Place hold on <em>Modeling, characterization and optimization of InAIAs/InGaAs heterojunction, InP based high electron applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=867584</guid> </item> <item> <title> Modelling, Simulation and characterization of nano scale MOSFETs with quantum mechanical effects and Gate Stack engineering for ULSI </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=877972</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Mangla Tina.<br /> 2006 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=877972">Place hold on <em>Modelling, Simulation and characterization of nano scale MOSFETs with quantum mechanical effects and Gate Stack engineering for ULSI</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=877972</guid> </item> <item> <title> Modelling, Simulation and characterization of nano scale MOSFETs with quantum mechanical effects and Gate Stack engineering for ULSI </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=869757</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Mangla Tina.<br /> 2006 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=869757">Place hold on <em>Modelling, Simulation and characterization of nano scale MOSFETs with quantum mechanical effects and Gate Stack engineering for ULSI</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=869757</guid> </item> <item> <title> Physics based analytical modeling and simulation of dual-material gate (DMG) mosfet </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=877462</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Saxena Manoj.<br /> Delhi University of Delhi India 2006 .<br /> 157p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=877462">Place hold on <em>Physics based analytical modeling and simulation of dual-material gate (DMG) mosfet</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=877462</guid> </item> <item> <title> Physics based analytical modeling and simulation of dual-material gate (DMG) mosfet </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=869247</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Saxena Manoj.<br /> Delhi University of Delhi India 2006 .<br /> 157p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=869247">Place hold on <em>Physics based analytical modeling and simulation of dual-material gate (DMG) mosfet</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=869247</guid> </item> <item> <title> Poly-crystalline silicon thin film transistors Modeling, simulation and characterization </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=877465</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Sehgal Amit.<br /> Delhi University of Delhi India 2006 .<br /> 237p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=877465">Place hold on <em>Poly-crystalline silicon thin film transistors </em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=877465</guid> </item> <item> <title> Poly-crystalline silicon thin film transistors Modeling, simulation and characterization </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=869250</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Sehgal Amit.<br /> Delhi University of Delhi India 2006 .<br /> 237p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=869250">Place hold on <em>Poly-crystalline silicon thin film transistors </em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=869250</guid> </item> <item> <title> Theoretical analysis and modelling of polysilicon thin film transistors </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=876425</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Bindra Simrata.<br /> 2004 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=876425">Place hold on <em>Theoretical analysis and modelling of polysilicon thin film transistors</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=876425</guid> </item> <item> <title> Theoretical analysis and modelling of polysilicon thin film transistors </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=868210</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Bindra Simrata.<br /> 2004 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=868210">Place hold on <em>Theoretical analysis and modelling of polysilicon thin film transistors</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=868210</guid> </item> <item> <title> Two dimensional modeling and characterization of short channel vertical cylindrical/surrounding gate SOI MOSFETs (CGT/SGT) for ULSI circuit applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=873849</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Abhinav Kranti.<br /> 2001 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=873849">Place hold on <em>Two dimensional modeling and characterization of short channel vertical cylindrical/surrounding gate SOI MOSFETs (CGT/SGT) for ULSI circuit applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=873849</guid> </item> <item> <title> Two dimensional modeling and characterization of short channel vertical cylindrical/surrounding gate SOI MOSFETs (CGT/SGT) for ULSI circuit applications </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=865634</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Abhinav Kranti.<br /> 2001 </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=865634">Place hold on <em>Two dimensional modeling and characterization of short channel vertical cylindrical/surrounding gate SOI MOSFETs (CGT/SGT) for ULSI circuit applications</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=865634</guid> </item> <item> <title> Two dimentsional physical based analytical modeling and simulation of silicon-on-nothing (SON) MOSFET </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=878327</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Kasturi Poonam.<br /> 2007 .<br /> 185p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=878327">Place hold on <em>Two dimentsional physical based analytical modeling and simulation of silicon-on-nothing (SON) MOSFET</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=878327</guid> </item> <item> <title> Two dimentsional physical based analytical modeling and simulation of silicon-on-nothing (SON) MOSFET </title> <dc:identifier>ISBN:</dc:identifier> <!-- prettier-ignore-start --> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=870112</link> <!-- prettier-ignore-end --> <description> <![CDATA[ <p> By Kasturi Poonam.<br /> 2007 .<br /> 185p. | p. cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=870112">Place hold on <em>Two dimentsional physical based analytical modeling and simulation of silicon-on-nothing (SON) MOSFET</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=870112</guid> </item> </channel> </rss>
