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008			250623b |||||||| |||| 00| 0 eng d
020			_a9798886130157
040			_aCSL _cCSL
041			_2eng _aeng
084			_aC21:(D) R4 _qCSL
100			_aLundstrom, Mark _eauthor. _9814190
245			_aFundamentals Of Nanotransistors
260			_aSingapore : _bWorld Scientific, _c2024.
300			_axiv, 342p. _b: ill. _c; 23cm.
490			_aLessons from Nanosciences : Lecture Note Series _v6 v.
500			_aIncludes references ,appendix and index.
520			_aThe transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits
650			_aTransistors. _9814191
650			_a Electrostatics. _9814192
650			_aBallistic conduction. _9814193
650			_a Nanoelectronics. _9814194
942			_2CC _cTEXL _hC21:(D) R4 _n0
999			_c1432763 _d1432763