000			01671nam a2200289Ia 4500
003			OSt
005			20251112121558.0
008			220909b |||||||| |||| 00| 0 eng d
020			_a9789814411486
037			_cTextual
040			_aCSL _beng _cCSL
041			_aeng
084			_aC6:212 Q5;1 _qCSL
100			_aMorigaki, Kazuo _eauthor _9850905
245		0	_aLight-induced deffects in semiconductors
260			_aSingapore : _bPan stanford, _c2015.
300			_avii,199p. _b: ill.
500			_aBibliography 173-194p.; Index 195-199p.
520			_aThis book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.
650			_a Amorphous chalcogenides _9850906
650			_a Crystalline semiconductors _9850907
650			_aHydrogenated microcrystalline silicon _9850908
700			_aHikita, Harumi _eco-author _9850909
700			_aOgihara Chisato _eco-author _9850910
942			_hC6:212 Q5;1 _cTEXL _2CC _n0
999			_c15826 _d15826