000			01937nam a2200277Ia 4500
003			OSt
005			20251224123416.0
008			220909b |||||||| |||| 00| 0 eng d
020			_a9781107005938
037			_cTextbook
040			_aCSL _beng _cCSL
041			_aeng
084			_aC6:212, Q4 TC _qCSL
100			_aEngstrom, Olof _eauthor. _9859360
245		0	_aMos system
260			_aUK: _bCUP, _c2014.
300			_a9, 355p. _b: ill.
500			_aIndex 352-355p.
520			_aThis detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.
650			_a Carrier capture _9859361
650			_a Electrical characterization _9859362
650			_a Gate metals _9859363
650			_aElectron states _9859364
942			_hC6:212, Q4 TC _cTB _2CC _n0
999			_c16336 _d16336