| 000 | 00966nam a2200289Ia 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220912145141.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 020 | _a9781848820586 (hbd) | ||
| 024 | _a84477 | ||
| 037 | _b2004, 11/08/2009, New India Book Agency | ||
| 037 | _cTextbook | ||
| 040 |
_aCSL _beng _cCSL |
||
| 041 | _aeng | ||
| 082 | _aC6:212, P9 TB | ||
| 100 | _aSeebauer Edmund G Ed. | ||
| 245 | 0 | _aCharged semiconductor defects: Structure, thermodynamics and diffusion | |
| 260 |
_aLondon _bSpringer _c2009 |
||
| 300 |
_axiv, 294p. _ccm. |
||
| 490 | _aEngineering materials and processes | ||
| 500 | _aIncludes bibliographical references.; Index 291-293p. | ||
| 700 | _a Kratzer Meredith C Ed. | ||
| 942 |
_hC6:212, P9 TB _cTB _2CC |
||
| 999 |
_c24496 _d24496 |
||