| 000 | 01143nam a2200337Ia 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220912145148.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 020 | _a9783540888468 (hbd) | ||
| 024 | _a84474 | ||
| 037 | _b1134, 23/09/2010, Ashutosh Technical Books | ||
| 037 | _cTextbook | ||
| 040 |
_aCSL _beng _cCSL |
||
| 041 | _aeng | ||
| 082 | _aC6:212OaE3150, P9 TC | ||
| 100 | _aYao Takafumi Ed. | ||
| 245 | 0 | _aOxide and nitride semiconductors:processing, properties, and applications | |
| 260 |
_aBerlin _bSpringer _c2009 |
||
| 300 |
_axiv, 517p. _ccm. |
||
| 490 | _aAdvances in materials research | ||
| 500 | _aIncludes bibliographical references.; 'Index 507-517p. | ||
| 650 | _a Gallicum nitride-electronic properties | ||
| 650 | _a Metal oxide semiconductors | ||
| 650 | _a Zine oxide-electronic properties | ||
| 650 | _aPhysics | ||
| 700 | _a Hong Soon-Ku Ed. | ||
| 942 |
_hC6:212OaE3150, P9 TC _cTB _2CC |
||
| 999 |
_c24823 _d24823 |
||