| 000 | 00885nam a2200289Ia 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220912150316.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 024 | _a28667 | ||
| 037 | _cTextual | ||
| 040 |
_aCSL _beng _cCSL |
||
| 041 | _aeng | ||
| 082 | _aC6:212p1,N81, M2 | ||
| 100 | _aLeamy H J Ed. | ||
| 111 | _aMeeting on grain boundaries in semiconductors (1981 : Boston) | ||
| 245 | 0 | _aProceeding on grain boundaries in semiconductors | |
| 260 |
_aNew York _b North-Holland _c1982 |
||
| 300 |
_axvii, 417p. _ccm. |
||
| 490 | _aMaterial research society symposia proceedings; 5 | ||
| 650 | _aPhysics | ||
| 700 | _a Pitke G E Ed. | ||
| 700 | _a Seager C H Ed. | ||
| 942 |
_hC6:212p1,N81, M2 _cTEXL _2CC |
||
| 999 |
_c44561 _d44561 |
||