| 000 | 00724nam a2200265Ia 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220912150337.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 024 | _a48875 | ||
| 037 | _cTextual | ||
| 040 |
_aCSL _beng _cCSL |
||
| 041 | _aeng | ||
| 082 | _aC6:212, M11 M3.2 | ||
| 100 | _aBourgoin J | ||
| 245 | 0 | _aPoint defects in semiconductors II | |
| 260 |
_aBerlin _bSpringer-Verlag _c1983 |
||
| 300 |
_axvi,295p. _ccm. |
||
| 490 | _aSpringer series in solid-state sciences; 35 | ||
| 650 | _aSemiconductors | ||
| 700 | _a Lannoo M | ||
| 942 |
_hC6:212, M11 M3.2 _cTEXL _2CC |
||
| 999 |
_c45372 _d45372 |
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