| 000 | 00839nam a2200277Ia 4500 | ||
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| 003 | OSt | ||
| 005 | 20220912150341.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 024 | _a31511 | ||
| 037 | _cTextual | ||
| 040 |
_aCSL _beng _cCSL |
||
| 041 | _aeng | ||
| 082 | _aC6:212p1,N81, M5 | ||
| 100 | _aJain S C Ed. | ||
| 111 | _aTHIRD INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES (Nove-27-D : Madras India) | ||
| 245 | 0 | _aProceedings on physics of semiconductor devices | |
| 260 |
_aNew Delhi _b Wiley Eastern _c1985 |
||
| 300 |
_axvi, 803p. _ccm. |
||
| 650 | _a Electricity | ||
| 650 | _aSemicondutor | ||
| 700 | _a Radhkrishna S Ed. | ||
| 942 |
_hC6:212p1,N81, M5 _cTEXL _2CC |
||
| 999 |
_c45578 _d45578 |
||