| 000 | 00697nam a2200265Ia 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220912150528.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 024 | _a28080 | ||
| 037 | _cTextual | ||
| 040 |
_aCSL _beng _cCSL |
||
| 041 | _aeng | ||
| 082 | _aC6:212(E141), M1 | ||
| 100 | _aRavi K V | ||
| 245 | 0 | _aimperfection and impurities in semiconductor silicon | |
| 260 |
_aNew York _b John Wiley _c1981 |
||
| 300 |
_axiv,379p. _ccm. |
||
| 500 | _aIncludes bibliography | ||
| 650 | _a Silicon | ||
| 650 | _aPhysics | ||
| 942 |
_hC6:212(E141), M1 _cTEXL _2CC |
||
| 999 |
_c49435 _d49435 |
||