| 000 | 00858nam a2200289Ia 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220912150846.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 024 | _a28078 | ||
| 037 | _cTextual | ||
| 040 |
_aCSL _beng _cCSL |
||
| 041 | _aeng | ||
| 082 | _aC6:212(E141), M4.2 | ||
| 100 | _aJoannopou Los J D Ed. | ||
| 245 | 0 | _aPhysics of hydrogenated amorphous silicon II:electronic and vibrarional properties | |
| 260 |
_aBerlin _bSpringer-Verlag _c1984 |
||
| 300 |
_axi,360p. _ccm. |
||
| 490 | _aTopics in Applied Physics; 56 | ||
| 500 | _aIncludes bibliography | ||
| 650 | _a Semi-conductor | ||
| 650 | _aPhysics | ||
| 700 | _a Lucovsky G Ed. | ||
| 942 |
_hC6:212(E141), M4.2 _cTEXL _2CC |
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| 999 |
_c56417 _d56417 |
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