| 000 | 00763nam a2200277Ia 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220912150957.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 024 | _a32791 | ||
| 037 | _cTextual | ||
| 040 |
_aCSL _beng _cCSL |
||
| 041 | _aeng | ||
| 082 | _aC6:212, M2 | ||
| 100 | _aTsidilkovski I M | ||
| 245 | 0 | _aBond structure of semiconductor | |
| 260 |
_aOxford _bPergamon _c1982 |
||
| 300 |
_ax,406p. _ccm. |
||
| 490 | _aInteranational series in the science of the solid state; 19 | ||
| 500 |
_aBibliography p. _ccm.375-400 |
||
| 650 | _a Semiconductor devices | ||
| 650 | _aPhysics | ||
| 942 |
_hC6:212, M2 _cTEXL _2CC |
||
| 999 |
_c58771 _d58771 |
||