| 000 | 00809nam a2200277Ia 4500 | ||
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| 003 | OSt | ||
| 005 | 20220912151204.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 024 | _a26236 | ||
| 037 | _cTextual | ||
| 040 |
_aCSL _beng _cCSL |
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| 041 | _aeng | ||
| 082 | _aC2150j6:212p1,N80, M1 | ||
| 100 | _aYonezawa F Ed. | ||
| 111 | _aPROCEEDING (8-11-TEME : KYOTO JAPAN) | ||
| 245 | 0 | _aFundamental physics of amorphous semiconductors | |
| 260 |
_aBerlin _bSpringer Verlag _c1981 |
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| 300 |
_aviii, 181p. _ccm. |
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| 490 | _aSpringer series in solid-state sciences | ||
| 500 | _aIncludes bibliography | ||
| 650 | _aSolid state | ||
| 942 |
_hC2150j6:212p1,N80, M1 _cTEXL _2CC |
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| 999 |
_c63141 _d63141 |
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