| 000 | 00652nam a2200241Ia 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220912151558.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 024 | _a49981 | ||
| 037 | _cTextual | ||
| 040 |
_aCSL _beng _cCSL |
||
| 041 | _aeng | ||
| 082 | _aC6:212, M4 | ||
| 100 | _aLarrabee Robert D Ed. | ||
| 245 | 0 | _aNeutron transmutation doping of semiconductor materials | |
| 260 |
_aNew York _b Plenum Press _c1984 |
||
| 300 |
_a336p. _ccm. |
||
| 650 | _aSemiconductors | ||
| 942 |
_hC6:212, M4 _cTEXL _2CC |
||
| 999 |
_c71803 _d71803 |
||