| 000 | 00906nam a2200253Ia 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220930091110.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220926b |||||||| |||| 00| 0 eng d | ||
| 024 | _a3496 | ||
| 037 | _cTheses | ||
| 040 |
_aCRL _cCRL _beng |
||
| 041 |
_2eng _aeng |
||
| 100 |
_aParashar Ayushman _9544770 |
||
| 110 |
_aUnivearsity of Delhi. Faculty of Science. Department of physics and astrophysics _9544771 |
||
| 245 | 0 | _aInfluence of plasma enhanced chemical vapour deposition process parameters on the growth and properties of hydrogenated micro/ nanocrystalline silicon films | |
| 260 | _c2010 | ||
| 650 | _aPHYSICS | ||
| 700 |
_a Hashmi S. A. Gu. _9544772 |
||
| 700 |
_aUnivearsity of Delhi. Faculty of Science. Department of physics and astrophysics _9544773 |
||
| 942 |
_cDIS _2CC |
||
| 999 |
_c881637 _d881637 |
||