000 00606nam a2200229Ia 4500
003 OSt
005 20221005091831.0
006 a|||||r|||| 00| 0
007 ta
008 221004b |||||||| |||| 00| 0 eng d
020 _a0080212449
024 _a103556
037 _cTextual
040 _aCRL
_cCRL
_beng
041 _2eng
_aeng
082 _aC6:21, L7
100 _aRoy D.K.
245 0 _aTunnelling and negative resistance phenomena ins emiconductors
260 _aNew York
_bPergamon Press USA
_c1977
942 _hC6:21, L7
_cTEXL
_2cc
999 _c997858
_d997858