APA

Parashar Ayushman, Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics, Hashmi S. A. Gu & Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics. (2010). Influence of plasma enhanced chemical vapour deposition process parameters on the growth and properties of hydrogenated micro/ nanocrystalline silicon films. : .

Chicago

Parashar Ayushman, Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics, Hashmi S. A. Gu and Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics. 2010. Influence of plasma enhanced chemical vapour deposition process parameters on the growth and properties of hydrogenated micro/ nanocrystalline silicon films. : .

Harvard

Parashar Ayushman, Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics, Hashmi S. A. Gu and Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics. (2010). Influence of plasma enhanced chemical vapour deposition process parameters on the growth and properties of hydrogenated micro/ nanocrystalline silicon films. : .

MLA

Parashar Ayushman, Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics, Hashmi S. A. Gu and Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics. Influence of plasma enhanced chemical vapour deposition process parameters on the growth and properties of hydrogenated micro/ nanocrystalline silicon films. : . 2010.