APA
Parashar Ayushman, Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics, Hashmi S. A. Gu & Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics. (2010). Influence of plasma enhanced chemical vapour deposition process parameters on the growth and properties of hydrogenated micro/ nanocrystalline silicon films. : .
Chicago
Parashar Ayushman, Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics, Hashmi S. A. Gu and Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics. 2010. Influence of plasma enhanced chemical vapour deposition process parameters on the growth and properties of hydrogenated micro/ nanocrystalline silicon films. : .
Harvard
Parashar Ayushman, Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics, Hashmi S. A. Gu and Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics. (2010). Influence of plasma enhanced chemical vapour deposition process parameters on the growth and properties of hydrogenated micro/ nanocrystalline silicon films. : .
MLA
Parashar Ayushman, Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics, Hashmi S. A. Gu and Univearsity of Delhi. Faculty of Science. Department of physics and astrophysics. Influence of plasma enhanced chemical vapour deposition process parameters on the growth and properties of hydrogenated micro/ nanocrystalline silicon films. : . 2010.